We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.
@article{arxiv.0901.4439,
title = {Carbon Based Resistive Memory},
author = {Franz Kreupl and Rainer Bruchhaus and Petra Majewski and Jan B. Philipp and Ralf Symanczyk and Thomas Happ and Christian Arndt and Mirko Vogt and Roy Zimmermann and Axel Buerke and Andrew P. Graham and Michael Kund},
journal= {arXiv preprint arXiv:0901.4439},
year = {2009}
}
Comments
to be published in Digest of the International Electron Devices Meeting (IEDM) 2008, p. 521-524, 4 pages, 12 figures