Two-Dimensional (2D) transition metal dichalcogenides (TMDs) have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties, iron-doped MoS2 (Fe:MoS2) is considered the next-generation quantum and magnetic material. It is essential to understand Fe:MoS2's thermal behavior since temperature and thermal load/activation are crucial for their magnetic properties and the current nano and quantum devices have been severely limited by thermal management. In this work, Fe:MoS2 is synthesized by doping Fe atoms into MoS2 using the chemical vapor deposition (CVD) synthesis and a refined version of opto-thermal Raman technique is used to study the thermal transport properties of Fe:MoS2 in the forms of single (1L), bilayer (2L), and tri-layer (3L). In the Opto-thermal Raman technique, a laser is focused on the center of a thin film and used to measure the peak position of a Raman-active mode. The lateral thermal conductivity of 1-3L of Fe:MoS2 and the interfacial thermal conductance between Fe:MoS2 and the substrate were obtained by analyzing the temperature-dependent and power-dependent Raman measurement, laser power absorption coefficient, and laser spot sizes. We also characterized Fe:MoS2's thermal transport at high temperature, and calculated Fe:MoS2's thermal transport by density theory function. These findings will shed light on the thermal management and thermoelectric designs for Fe:MoS2 based nano and quantum electronic devices.
@article{arxiv.2412.06051,
title = {Layer Dependent Thermal Transport Properties of One- to Three-Layer Magnetic Fe:MoS2},
author = {Elham Easy and Mengqi Fang and Mingxing Li and Eui-Hyeok Yang and Xian Zhang},
journal= {arXiv preprint arXiv:2412.06051},
year = {2024}
}