Related papers: Intrinsic Mobility Limiting Mechanisms in Lanthanu…
We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…
In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon…
We investigate the electronic and vibrational spectra of SrTiO$_3$, as well as the coupling between them, using first-principles calculations. We compute electron-phonon scattering rates for the three lowest-energy conduction bands and use…
Mobility is a key parameter for SnO2, which is extensively studied as a practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room…
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary…
Structural phase transitions and soft phonon modes pose a longstanding challenge to computing electron-phonon (e-ph) interactions in strongly anharmonic crystals. Here we develop a first-principles approach to compute e-ph scattering and…
Ta-doped SnO$_2$ films with high conductivity and high optical transparency have been successfully fabricated using rf-sputtering method and their electrical transport properties have been investigated. All films reveal degenerate…
We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/\tau_{\varphi}$ as a function of $T$ for each film was extracted…
The temperature $T$ and magnetic field $H$ dependence of the resistivity $\rho$ has been measured for La$_{0.8-y}$Sr$_{0.2}$MnO$_{3}$ (y=0 and 0.128) films grown on (100) SrTiO$_{3}$ substrates. The low-temperature $\rho$ in the…
By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor…
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…
The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…
We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that…
The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope of ab-inito calculations. Using this method in conjunction…
Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440…
In this letter, we theoretically study the electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon,…
We investigate phonon transport in perovskite strontium titanate (SrTiO3) which is stable above its phase transition temperature (~105 K) by using first-principles molecular dynamics and anharmonic lattice dynamics. Unlike conventional…
In three dimensional (3D) disordered metals, the electron-phonon (\emph{e}-ph) scattering is the sole significant inelastic process. Thus the theoretical predication concerning the electron-electron (\emph{e}-\emph{e}) scattering rate…
BaSnO$_3$ (BSO) is a promising transparent conducting oxide (TCO) with reported room-temperature (RT) Hall mobility exceeding 320 cm$^{2}$V$^{-1}$s$^{-1}$. Among perovskite oxides, it has the highest RT mobility, about 30 times higher than…