English

Spin-wave scattering at low temperatures in manganite films

Strongly Correlated Electrons 2009-11-10 v1 Materials Science

Abstract

The temperature TT and magnetic field HH dependence of the resistivity ρ\rho has been measured for La0.8y_{0.8-y}Sr0.2_{0.2}MnO3_{3} (y=0 and 0.128) films grown on (100) SrTiO3_{3} substrates. The low-temperature ρ\rho in the ferromagnetic metallic region follows well ρ(H,T)=ρ0(H)+A(H)ωs/sinh(ωs/2kBT)+B(H)T7/2\rho (H,T)=\rho _{0}(H)+A(H)\omega_{s}/\sinh (\hbar \omega_{s}/2k_{B}T)+B(H)T^{7/2} with ρ0\rho _{0} being the residual resistivity. We attribute the second and third term to small-polaron and spin-wave scattering, respectively. Our analysis based on these scattering mechanisms also gives the observed difference between the metal-insulator transition temperatures of the films studied. Transport measurements in applied magnetic field further indicate that spin-wave scattering is a key transport mechanism at low temperatures.

Keywords

Cite

@article{arxiv.cond-mat/0302486,
  title  = {Spin-wave scattering at low temperatures in manganite films},
  author = {X. J. Chen and H. -U. Habermeier and C. L. Zhang and H. Zhang and C. C. Almasan},
  journal= {arXiv preprint arXiv:cond-mat/0302486},
  year   = {2009}
}

Comments

5 pages, 4 figures. to appear in Phys. Rev. B