Electron mobility of SnO2 from first principles
Abstract
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature- and doping-concentration dependence, and to elucidate the scattering mechanisms that limit transport. We include both electron-phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. We find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10^18 cm^-3.
Cite
@article{arxiv.2401.12158,
title = {Electron mobility of SnO2 from first principles},
author = {Amanda Wang and Kyle Bushick and Nick Pant and Woncheol Lee and Xiao Zhang and Joshua Leveillee and Feliciano Giustino and Samuel Poncé and Emmanouil Kioupakis},
journal= {arXiv preprint arXiv:2401.12158},
year = {2024}
}
Comments
24 pages, 3 figures in main text, 6 figures in supplementary material