Related papers: Static Non-linearity in Graphene Field Effect Tran…
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the…
When a composite of nonlinear particles suspended in a host medium is subjected to a sinusoidal electric field, the electrical response in the composite will generally consist of alternating current (AC) fields at frequencies of…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser…
In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by…
The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…
The nonlinear magneto-optic responses are investigated for gapped graphene and doped graphene in a perpendicular magnetic field. The electronic states are described by Landau levels, and the electron dynamics in an optical field is obtained…
The visible spectrum of H3+ is studied using high-sensitivity action spectroscopy in a cryogenic radiofrequency multipole trap. Advances are made to measure the weak ro-vibrational transitions from the lowest rotational states of H3+ up to…
A new decomposition method for nonstationary signals, named Adaptive Local Iterative Filtering (ALIF), has been recently proposed in the literature. Given its similarity with the Empirical Mode Decomposition (EMD) and its more rigorous…
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…
We present a theoretical framework for nonlinear optics of graphene and other 2D materials in layered structures. We derive a key equation to find the effective electric field and the sheet current density in the 2D material for given…
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects…
In this article we study the stability problem for the Einstein metrics on Sasaki Einstein and on complete nearly parallel ${\rm G}_2$ manifolds. In the Sasaki case we show linear instability if the second Betti number is positive.…
Hyperexponential stability is investigated for dynamical systems with the use of both, explicit and implicit, Lyapunov function methods. A nonlinear hyperexponential control is designed for stabilizing linear systems. The tuning procedure…
Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and…
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…
Intense efforts have been made in recent years to realize nonlinear optical interactions at the single-photon level. Much of this work has focused on achieving strong third-order nonlinearities, such as by using single atoms or other…
Nonlinear effects in emission and absorption spectra of gaseous systems are considered. It is shown that level splitting can be detected spectroscopically even if it is below the Doppler width. Conditions for distinguishing interference…
We solve a nonlinear integral equation for the electrostatic potential in doped graphene due to an external charge, arising from a Thomas-Fermi (TF) model for screening by graphene's $\pi$ electron bands. In particular, we study the effects…