Related papers: Static Non-linearity in Graphene Field Effect Tran…
We introduce four basic two-dimensional (2D) plaquette configurations with onsite cubic nonlinearities, which may be used as building blocks for 2D PT -symmetric lattices. For each configuration, we develop a dynamical model and examine its…
In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…
In this article, a previously published amplifier-less potentiostat architecture is further examined. Starting with a linearized model, the impact of the most important parameters is studied taking in account the electrodes-solution…
We present a full formalism for the calculation of the linear and second-order optical response for semiconductors and insulators. The expressions for the optical susceptibilities are derived within perturbation theory. As a starting point…
This paper presents comprehensive studies on frequency response optimized integrators considering second order derivative regarding their numerical error, numerical stability and transient performance. Frequency domain error analysis is…
We study the excitation of spatial patterns by resonant, multi-frequency forcing in systems undergoing a Hopf bifurcation to spatially homogeneous oscillations. Using weakly nonlinear analysis we show that for small amplitudes only stripe…
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induced by geometrical scaling effects for graphene transistor…
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are…
The nonlinear responses of different materials provide useful mechanisms for optical switching, low noise amplification, and harmonic frequency generation. However, the nonlinear processes usually have an extremely weak nature and require…
Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for…
Although massless Dirac fermions in graphene constitute a centrosymmetric medium for in-plane excitations, their second-order nonlinear optical response is nonzero if the effects of spatial dispersion are taken into account. Here we present…
Using a powerful homogenization technique, one- and two-dimensional graphene metasurfaces are homogenized both at the fundamental frequency (FF) and second harmonic (SH). In both cases, there is excellent agreement between the predictions…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
Integral expressions are determined for the elastic displacement and stress fields due to stationary or moving dislocation loops in finite samples. These general expressions are valid for anisotropic media as well. Specifically for the…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
This research work focuses on the design of a high-resolution fast Fourier transform (FFT) /inverse fast Fourier transform (IFFT) processors for constraints analysis purpose. Amongst the major setbacks associated with such high resolution,…
We present a new technique for verifying nonlinear and hybrid models with inputs. We observe that once an input signal is fixed, the sensitivity analysis of the model can be computed much more precisely. Based on this result, we propose a…
This paper proposes an efficient method for the calculation of the stabilization parameters in RF power amplifiers operating in periodic large-signal regimes. Stabilization is achieved by applying the principles of linear control theory for…