Related papers: Field-effect transistors made of individual colloi…
Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they…
Two-dimensional, solution-processable semiconductor materials are anticipated to be used in low-cost electronic applications, such as transistors and solar cells. Here, lead sulfide nanosheets with a lateral size of several microns are…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized…
Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device…
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other…
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…
Colloidal materials of tin(II) sulfide (SnS), as a layered semiconductor with a narrow band gap, are emerging as a potential alternative to the more toxic metal chalcogenides (PbS, PbSe, CdS, CdSe) for various applications such as…
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…
We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer…
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…
We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the…