Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.
@article{arxiv.cond-mat/0406494,
title = {Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays},
author = {Ali Javey and Jing Guo and Damon B. Farmer and Qian Wang and Erhan Yenilmez and Roy G. Gordon and Mark Lundstrom and Hongjie Dai},
journal= {arXiv preprint arXiv:cond-mat/0406494},
year = {2015}
}