Related papers: Weak localization scattering lengths in epitaxial,…
We present a unified understanding of the experimentally observed minimal dc conductivity in weakly disordered graphene. Firstly, based on linear response theory, we reveal that randomness or disorder inevitably induces momentum dependent…
The effect of weak potential and bond disorder on the density of states of graphene is studied. By comparing the self-consistent non-crossing approximation on the honeycomb lattice with perturbation theory on the Dirac fermions, we…
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the…
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature…
Combining scattering matrix formalism with non-linear $\sigma$-model technique we analyze weak localization effects in arrays of chaotic quantum dots connected via barriers with arbitrary distribution of channel transmissions. With the aid…
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…
We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder at half filling. We show that the transport properties of the system depend strongly on the symmetry of disorder. We find that…
We have experimentally investigated quantum interference corrections to the conductivity of graphene nanoribbons at temperatures down to 20 mK studying both weak localization (WL) and universal conductance fluctuations (UCF). Since in…
The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this…
Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this…
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…
The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a…
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance…
We study a weakly disordered 2D electron gas with two bands and a spectral node within the weak-localization approach and compare its results with those of Gaussian fluctuations around the self-consistent Born approximation. The appearance…
We present a minimal but crucial microscopic theory for epitaxial graphene and graphene nanoribbons on the 4H-SiC(0001) surface -- protopypical materials to explore physical properties of graphene in large scale. Coarse-grained model…
The minimum conductivity value as well as the linear dependence of conductivity on the charge density near the Dirac point in single and doublelayer graphene is derived from the energy-time uncertainty principle applied to ballistic charge…
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that…
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot…
We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…