Related papers: Weak localization scattering lengths in epitaxial,…
Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized SiC(0001). The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite…
We report room temperature scanning tunneling microscopy and spectroscopy study of bilayer graphene prepared by mechanical exfoliation on SiO$_2$/Si surface and electrically contacted with gold pads using a mechanical mask. The bulk…
Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…
We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the…
We propose the weak localization of magnons in a disordered two-dimensional antiferromagnet. We derive the longitudinal thermal conductivity $\kappa_{xx}$ for magnons of a disordered Heisenberg antiferromagnet in the linear-response theory…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport…
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…
Both transport $\tau_{tr}$ and elastic scattering times $\tau_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier…
We present a theory of weak localization (WL) in the presence of generic spin-dependent fields, including any type of spin-orbit coupling, Zeeman fields, and non-homogeneous magnetic textures. We go beyond the usual diffusive approximation,…
The heating of carriers in an intrinsic graphene under an abrupt switching off a dc electric field is examined taking into account both the energy relaxation via acoustic and optic phonons and the interband generation-recombination…
Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, transition metal dichalcogenide monolayers, black phosphorene, and tellurene. Beyond pristine two-dimensional materials,…
Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi…
We investigate conductance fluctuations as a function of carrier density $n$ and magnetic field in diffusive mesoscopic samples made from monolayer and bilayer graphene. We show that the fluctuations' correlation energy and field, which are…
Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density…
We calculate the interference correction to the conductivity of doped transition metal dichalcogenide (TMDC) monolayers. Because of the interplay between valley structure and intrinsic spin-orbit coupling (SOC), these materials exhibit a…
We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential…
Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically-vapor-deposited graphene, are…
We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak…
We have performed magnetoresistance measurements on polyfluorene sandwich devices in weak magnetic fields as a function of applied voltage, device temperature (10K to 300K), film thickness and electrode materials. We observed either…