Related papers: Performance Limits for Field Effect Transistors as…
We present a comprehensive symbol error rate (SER) analysis framework for link-level terahertz (THz)-band communication systems under linear zero-forcing (ZF) data detection. First, we derive the mismatched SER for indoor THz systems under…
We experimentally characterized terahertz (THz) radiation emitted from laser-wakefield acceleration (LWFA) driven at 100-TW laser power. Simultaneous measurements of the laser energy, electron-bunch charge, and THz energy reveal a quadratic…
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical…
In this paper, we will introduce a new designed direct conversion terahertz detector and we will compare its characteristics with a prefabricated design in order to obtain better performance of our new proposed design. Differences between…
High peak and average power free-electron lasers (FELs) in the terahertz region (THz) require small diameter, low-emittance, and high voltage electron beams. This paper presents two 1.5-2 MV, 100-200 A, thermionic cathode electron source…
The detective quantum efficiency (DQE) and normalised noise power spectrum (NNPS) of the Timepix4 hybrid pixel detector in event-driven mode in TEM have been measured at 100 kV and 200 kV. In a raw data readout mode, the zero-frequency DQE…
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…
Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the…
Terahertz radiation finds an increasing number of applications, yet efficient generation and detection remain a challenge and an active area of research. In particular, the precise detection of weak and narrowband terahertz signals is…
We present a metamaterial-based terahertz (THz) sensor for thickness measurements of subwavelength-thin materials and refractometry of liquids and liquid mixtures. The sensor operates in reflection geometry and exploits the frequency shift…
We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\Omega$ $\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a…
Both the radiation efficiency and bandwidth of electrically small antennas are dramatically reduced as the size decreases. Fundamental limitations on the bandwidth of small antennas have been thoroughly treated in the past. However, upper…
The terahertz emission from difference-frequency in biased superlattices is calculated with the excitonic effect included. Owing to the doubly resonant condition and the excitonic enhancement, the typical susceptibility can be as large as…
Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatible floating gate devices capable of detecting charges on their sensing area by the relative shifts in current-voltage (I-V) characteristics. The I-V shifts are…
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As…
We investigate theoretically a novel type of high frequency quantum detector based on the mesoscopic capacitor recently realized by Gabelli et al., [Science {\bf 313}, 499 (2006)], which consists of a quantum dot connected via a single…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…