Related papers: Performance Limits for Field Effect Transistors as…
Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's…
By exploiting singular spatial modulations of the graphene conductivity, we design a broadband, tunable THz absorber whose efficiency approaches the theoretical upper bound for a wide absorption band with a fractional bandwidth of 185\%.…
While established semiconductor measurement techniques such as four-point probe or capacitance-voltage measurements require a physical contact to the material, terahertz spectroscopy is completely contact-free. Its capability to measure the…
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction…
Based on conventional S-20 processes, a new series of high quantum efficiency (QE) photocathodes has been developed that can be specifically tuned for use in the ultraviolet, blue or green regions of the spectrum. The QE values exceed 30%…
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range…
While field-driven electron emission is theoretically understood down to the subcycle regime, its direct experimental temporal characterization using long-wavelength terahertz (THz) fields remains elusive. Here, by driving a graphite tip…
The need for ever-faster information processing requires extremely small devices operating at frequencies approaching the terahertz and petahertz regimes. For the diagnostics of such devices, researchers need a spatiotemporal tool that…
Fundamental phase-shift detection properties of optical multimode interferometers are analyzed. Limits on perfectly distinguishable phase shifts are derived for general quantum states of a given average energy. In contrast to earlier work,…
We consider and compare candidate superconducting detector technologies that might be applied to the readout of cavity-axion haloscopes and similar fundamental physics experiments. We conclude that a transition edge sensor (TES) configured…
Transition Edge Sensors (TESs) are characterized by the intrinsic figure of merit to resolve both the energy and the statistical distribution of the incident photons. These properties lead TES devices to become the best single photon…
Single-photon terahertz (THz) detection is one of the most demanding technology for a variety of fields and could lead to many breakthroughs. Although its significant progress has been made in the last two decades, operating it at room…
Cross sections were measured for the near-threshold electrodisintegration of ^3He at momentum transfer values of q=2.4, 4.4, and 4.7 fm^{-1}. From these and prior measurements the transverse and longitudinal response functions R_T and R_L…
Characterization of a hybrid ${\it telescope}$ with gas transmission detector ($\Delta$E) and a solid-state stop detector (E) has been fabricated for detection of low energy $\alpha$ particles between 5 to 1 MeV. The detector is developed…
Achieving terabit-per-second (Tbps) data rates in terahertz (THz)-band communications requires bridging the complexity gap in baseband transceiver design. This work addresses the signal processing challenges associated with data detection…
In this letter, some applications of wireless communication systems over $\alpha-\eta-\kappa-\mu$ fading channels are analysed. More specifically, the effective rate and the average of both the detection probability and area under the…
The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the…
We study gated field effect transistors (FETs) with fractal geometries under Dyakonov and Shur asymmetric boundary conditions, where the source and drain span the left and right edges of the device respectively. An AC THz potential…
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from…
We investigate the continuous weak measurement of a solid-state qubit by single electron transistors in nonlinear response regime. It is found that the signal-to-noise ratio can violate the universal upper bound imposed quantum mechanically…