Related papers: Performance Limits for Field Effect Transistors as…
This article focuses on the near-field effect in terahertz (THz) communications and sensing systems. By equipping with extremely large-scale antenna arrays (ELAAs), the near-field region in THz systems can be possibly extended to hundreds…
The brightness of a light source defines its applicability to nonlinear phenomena in science. Bright low frequency terahertz (< 5THz) radiation confined to a diffraction-limited spot size is a present hurdle due to the broad bandwidth and…
The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection simulations showed that the graphene response sensitivity…
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to…
High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex…
We report on the numerical and theoretical results of sub-THz and THz detection by a current-driven InGaAs/GaAs plasmonic Field-Effect Transistor (TeraFET). New equations are developed to account for the channel length dependence of the…
We have evaluated the imaging capabilities of the Timepix4 hybrid silicon pixel detector for 100 keV and 200 keV electrons in a Transmission Electron Microscope (TEM). Using the knife-edge method, we have measured the Modulation Transfer…
We present a new method to calculate fundamental Doppler measurement limits with a dispersed fixed-delay interferometer (DFDI) in the near infrared wavelength region for searching for exoplanets around M dwarfs in the coming decade. It is…
Fingerprint spectral response of several materials with terahertz electromagnetic radiation indicates that terahertz technology is an effective tool for sensing applications. However, sensing few nanometer thin-film of dielectrics with much…
Quantum fluctuations yield inevitable noises in quantum detection. We derive an upper bound of signal to noise ratio for arbitrary quantum detection described by trace-class operators with discrete spectra. The bound is independent of…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the orthodox theory. In particular, we have studied the performance…
We consider a quantum sensor network of qubit sensors coupled to a field $f(\vec{x};\vec{\theta})$ analytically parameterized by the vector of parameters $\vec\theta$. The qubit sensors are fixed at positions $\vec{x}_1,\dots,\vec{x}_d$.…
The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and…
We prove that the force sensitivity of the conventional optomechanical detector associated with the optical quadrature measurement of the output beam is lower bounded by the so-called ultimate quantum limit (UQL), i.e., the absolute value…
This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged…
Terahertz (THz)-based electron manipulation has recently been shown to hold tremendous promise as a technology for manipulating and driving the next-generation of compact ultrafast electron sources. Here, we demonstrate an ultrafast…
In a typical multi-standard military communication receiver, fast and reliable spectrum sensing unit is required to extract the information of multiple channels (frequency bands) present in a wideband input signal. In this paper, an energy…
We use intense terahertz pulses to excite the resonant mode (0.6 THz) of a micro-fabricated dipole antenna with a vacuum gap. The dipole antenna structure enhances the peak amplitude of the in-gap THz electric field by a factor of ~170.…
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As…