Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response to the interface electric field, the amplitude of the THz emission peak in time-domain spectroscopy encapsulates rich information regarding MOS properties, notably the flat-band voltage. This paper concentrates on the precise quantitative estimation of the flat-band voltage within the Si MOS structure, elucidating the intricacies of the estimation process through the THz emission model.
@article{arxiv.2504.21265,
title = {Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES)},
author = {Dongxun Yang and Tonouchi Masayoshi},
journal= {arXiv preprint arXiv:2504.21265},
year = {2025}
}