Related papers: Performance Limits for Field Effect Transistors as…
On-chip inductor design plays a critical role in the advancement of radio-frequency integrated circuits (RFICs). Inductors typically occupy a substantial portion of the chip area as their performance metrics, namely, inductance density and…
We consider a far infrared (terahertz), room-temperature detector based on a microcantilever sensor of the radiation pressure. This system has a significantly higher sensitivity than existing uncooled detectors in the far infrared…
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel…
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias…
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional…
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range.…
The terahertz spectral regime, ranging from about 0.1 to 15 THz, is one of the least explored yet most technologically transformative spectral regions. One current challenge is to develop efficient and compact terahertz emitters/detectors…
Simple estimations show that the thermoelectric readout in graphene radiation detectors can be extremely effective even for graphene with modest charge-carrier mobility ~1000 cm^2/(Vs). The detector responsivity depends mostly on the…
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are…
Temperature-based radiation detectors are an essential tool for long optical wavelengths detection even if they often suffer from important bandwidth limitations. Their responsivity, and hence their noise equivalent power (NEP), typically…
Coherent detection and interferometry in the terahertz (THz) regime are key capabilities that enable applications ranging from astronomy to non-destructive testing. Phase-sensitive THz detection is currently achieved using nonlinear…
Developing low-power, high-sensitivity photodetectors for the terahertz (THz) band that operate at room temperature is an important challenge in optoelectronics. In this study, we introduce a photo-thermal-electric (PTE) effect detector…
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier…
Electrometers measure electric charge, but there must be a fundamental speed limit to measuring one electric charge. Since there are no dimensional inputs to this question, the answer must be expressible in terms of the fundamental physical…
Plasmonic photoconductive antennas have great promise for increasing responsivity and detection sensitivity of conventional photoconductive detectors in time-domain terahertz imaging and spectroscopy systems. However, operation bandwidth of…
We investigate terahertz emission from two-color fs-laser-induced microplasmas. Under strongest focusing conditions, microplasmas are shown to act as point-sources for broadband terahertz-to-far-infrared radiation, where the emission…
Dedicated spectrometers for terahertz radiation with [0.3, 30] THz frequencies using traditional optomechanical interferometry are substantially less common than their infrared and microwave counterparts. This paper presents the design and…