Related papers: Metal silicide/poly-Si Schottky diodes for uncoole…
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS…
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K…
It is known that swift heavy ion (SHI) irradiation at temperatures below $\sim$1000 K does not cause structural damage in the bulk SiC. However, the effect of the SiC film thickness on the formation and structure of SHI tracks over a wide…
The ability to manufacture nanomaterials with complex and structured composition using otherwise incompatible materials increasingly underpins the next generation of technologies. This is translating into growing efforts integrating a wider…
Vertical diamond Schottky diodes with blocking voltages $V_{\text{BD}} > 2.4 \text{ kV}$ and on-resistances $R_{\text{On}} < 400 \text{ m}\Omega \text{cm}^{2}$ were fabricated on homoepitaxially grown diamond layers with different surface…
On-chip photodetectors are essential components in optical communications as they convert light into an electrical signal. Photobolometers are type of photodetector that functions through a resistance change caused by electronic temperature…
Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our…
High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two…
We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by…
We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count…
Optical-based nanothermometry represents a transformative approach for precise temperature measurements at the nanoscale, which finds versatile applications across biology, medicine, and electronics. The assembly of ratiometric fluorescent…
Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution…
In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the…
We report a combined experimental and computational study of the optical properties of individual silicon telluride (Si2Te3) nanoplates. The p-type semiconductor Si2Te3 has a unique layered crystal structure with hexagonal closed-packed Te…
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high…
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed…
CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in…
A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the…
Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and…
Al/ maleic anhydride (MA) /p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating. The frequency and voltage dependent dielectric constant of Al/MA/p-Si have been investigated. Dielectric properties and…