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The regulation of temperature at the macro and microscale is a major energy-consuming process of humankind. Modern cooling systems account for 15% of the global energy consumption and are responsible for 10% of greenhouse gas emissions. Due…
The temperature dependence of optical constants of titanium nitride thin film is investigated using spectroscopic ellipsometry between 1.4 to 5 eV in the temperature range 300 K to 650 K in steps of 50 K. The real and imaginary parts of the…
Based on first-principles calculation we predict two new thermodynamically stable layered-phases of silicon, named as silicites, which exhibit strong directionality in the electronic and structural properties. As compared to silicon…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range…
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…
Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined…
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require…
The observation that the thermal conductivity of single-crystalline silicon nanowires with diameter on the length scale of 25 nm is lower than that of bulk material by two orders of magnitude has attracted the interest onto silicon as a…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
Silicon photomultipliers (SiPMs) are a good alternative to photomultiplier tubes (PMTs) because their gain and quantum efficiency are comparable to PMTs. However, the largest single-chip SiPM is still less than 1~cm$^2$. In order to use…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron…
Lowering the operating temperature of Solid Oxide Fuel Cells (SOFCs) is essential for improving durability and enabling large scale commercialization. Mixed ionic-electronic conductors (MIECs) of the Ruddlesden-Popper family, such as…
Employing amorphous superconductors, such as Type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…
A setup is designed for measuring the Seebeck coefficient (S) of materials in form of thin film, bar and wire. The main feature of this setup is control in heating and cooling cycles. In this setup heat pulse is used to generate the…
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…
Tunable dielectric meta-surface nanostructures offer incredible performance in optical application due to their extraordinary tunability of the polarization and engineering the dispersion of light with low loss in infrared range. In this…
Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…
We demonstrate integration of an amorphous silicon photodetector with thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration and experimental…