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The structure, composition and electrophysical characteristics of low-temperature silicon dioxide films under influence of various technology factors, such as ion implantation, laser irradiation, thermal and photonic annealing, have been…
Devices based on photonic integrated circuits play a crucial role in the development of low-cost, high-performance, industry-scale manufacturable sensors. We report the design, fabrication, and application of a silicon nitride…
Resistance thermometry provides a time-tested method for taking temperature measurements that has been painstakingly developed over the last century. However, fundamental limits to resistance-based approaches along with a desire to reduce…
Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range $300-800$ K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting…
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes.…
We have carried out systematic temperature-dependent neutron diffraction measurements in conjunction with dielectric spectroscopy from 6 to 300 K for sodium niobate based compounds (1-x) NaNbO3 -xBaTiO3 (NNBTx). The dielectric constant is…
Boron-doped molybdenum silicides have been already recognized as attractive candidates for space and ground ultra-high temperature applications far beyond limits of state-of-the-art nickel based superalloys. In this work, we are exploring a…
Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing…
The motivation of the current R&D project is based upon the requirements of the JEDI international collaboration aiming to measure Electric Dipole Moments (EDMs) of charged particles in storage rings. One of the most important elements of…
At ambient conditions, SiC is known to be resistant to irradiation with swift heavy ions (SHI) decelerating in the electronic stopping regime. However, there is no experimental data on the SiC irradiation at elevated temperatures. To…
Silicon nanocrystals (SiNCs) have been under active investigation in the last decades and have been considered as a promising candidate for many optoelectronic applications including highly-efficient solar cells. Some of the fundamental…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Transition metal chalcogenide tin sulfide (SnS) films as alternative noncontact alignment layer for liquid crystals, have been demonstrated and investigated. The SnS has an anisotropic atomic chain structure similar to black Phosphorous…
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped…
Ultrathin microscale resistive thermometers are of key value to many applications. Here we have fabricated a laser machined 50 ${\mu}$m wide and 50 nm thick serpentine Pt thin film sensor capable of sensing temperatures up to 650 ${^\circ}$…
One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…
This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-index-contrast photonic structures on both silicon and plastic substrates. The fabrication technique combines low-temperature…
The dielectric measurements of mesostructured silica MCM-41 with the pore diameter 3.5 nm at wettings close to maximal were carried out. The measurements were made by using the dielectric spectroscopy method at frequency interval from 25Hz…
A novel, to the best of our knowledge, ultralow-temperature luminescence thermometry strategy is proposed, based on a measurement of relative intensities of hyperfine components in the spectra of Ho$^{3+}$ ions doped into a crystal. A…
Al/Si photodiode were prepared by successive of deposition of Aluminum thin films on p-type Si (100) using coprecipitation method by evaporator in vacuum 2.0E-4 torr. The measured signals are attributed to a spectral response, which appears…