Related papers: Metal silicide/poly-Si Schottky diodes for uncoole…
This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large…
The temperature dependence of the x-ray scattering in the region below the first sharp diffraction peak was measured for silica glasses with low and high OH content (GE-124 and Corning 7980). Data were obtained upon scanning the temperature…
Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their…
Control of thermal emission is important in a number of applications from thermal energy harvesting and management and sensing of gas and chemical to thermal camouflage. Semiconductor-based devices can be engineered to enable electrical…
We have fabricated 4-element Graphene/Silicon on Insulator (SOI) based Schottky barrier photodiode array ()PDA and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as common electrode…
Deepening the understanding of interface-type Resistive Switching (RS) in metal/oxide heterojunctions is a key step for the development of high-performance memristors and Schottky rectifiers. In this study, we address the role of…
Scintillation characteristics of a thallium doped sodium iodide (NaI(Tl)) crystal with a dimension of 0.6 x 0.6 x 2 cm3 are studied by attaching a silicon photomultiplier (SiPM) direct to the crystal over a temperature range from 93 to 300…
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap…
We consider the factors that affect the photoactivity of silicon electrodes for the water-splitting reaction using a self-consistent continuum solvation (SCCS) model of the solid-liquid interface. This model allows us to calculate the…
We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…
Thin colloidal crystals (or synthetic opals) composed of Stober silica spheres typically develop cracks when they are utilized to obtain photonic band gap crystals (or inverted opals). We find that by sintering the silica spheres prior to…
Precise temperature measurement at micro/nanoscale is crucial across various domains including physical sciences, chemical processes, industrial production, medical diagnosis, weather forecasting, electronics, and biology. Micro/nanoscale…
Polarization is a fundamental property of light that carries distinct and valuable information. Consequently, its precise measurement is crucial for numerous applications, including biomedical imaging, remote sensing, and optical…
Under continuous light illumination, it is known that localized domains with segregated halide compositions form in semiconducting mixed-halide perovskites, thus severely limiting their optoelectronic applications due to the negative…
Physical properties of semiconducting CdF_2 crystals doped with In are determined from measurements of the radio-frequency response of a sample with Schottky barriers at frequencies 10 - 10^6 Hz. The dc conductivity, the activation energy…
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better…
Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 wt % and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced…
A network identification by deconvolution (NID) method is applied to the thermal transient response of packaged and unpackaged microcoolers. A thin film resistor on top of the device is used as the heat source and the temperature sensor.…