Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions

Y. Hikita; Y. Kozuka; T. Susaki; H. Takagi; H. Y. Hwang

doi:10.1063/1.2719157

Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions

Strongly Correlated Electrons 2009-11-13 v1 Materials Science

Authors: Y. Hikita , Y. Kozuka , T. Susaki , H. Takagi , H. Y. Hwang

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Abstract

Internal photoemission spectroscopy was used to determine the Schottky barrier height in rectifying SrRuO3/Nb-doped SrTiO3 junctions for 0.01 wt % and 0.5 wt % Nb concentrations. Good agreement was obtained with the barrier height deduced from capacitance-voltage measurements, provided that a model of the nonlinear permittivity of SrTiO3 was incorporated in extrapolating the built-in potential, particularly for high Nb concentrations. Given the generic polarizability of perovskites under internal/external electric fields, internal photoemission provides a valuable independent probe of the interface electronic structure.

Keywords

Schottky barrier internal photoemission spectroscopy SrRuO3 Nb:SrTiO3 interface electronic structure perovskite

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@article{arxiv.cond-mat/0703358,
  title  = {Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions},
  author = {Y. Hikita and Y. Kozuka and T. Susaki and H. Takagi and H. Y. Hwang},
  journal= {arXiv preprint arXiv:cond-mat/0703358},
  year   = {2009}
}

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15 pages, 3 figures

Characterization of the Schottky Barrier in SrRuO3/Nb:SrTiO3 Junctions

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