The thermal stability of most electronic and photo-electronic devices strongly depends on the relationship between Schottky Barrier Height (SBH) and temperature. In this paper, the possible of thermionic current depicted via correct and reliability relationship between forward current and voltage is consequently discussed, the intrinsic SBH insensitive to temperature can be calculated by modification on Richardson- Dushman`s formula suggested in this paper. The results of application on four hetero-junctions prove that the method proposed is credible in this paper, this suggests that the I/V/T method is a feasible alternative to characterize these heterojunctions.
@article{arxiv.1708.06996,
title = {Extraction of Schottky barrier height insensitive to temperature via forward currentvoltage- temperature measurements},
author = {Liu Changshi},
journal= {arXiv preprint arXiv:1708.06996},
year = {2017}
}