Related papers: Complementary Resistive Switching in Tantalum Oxid…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
Presented below is an interesting type of associative memory called toggle memory based on the concept of T flip flops, as opposed to D flip flops. Toggle memory supports both reversible programming and charge recovery. Circuits designed…
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
Resistive random-access memory (ReRAM) is a promising candidate for the next generation non-volatile memory technology due to its simple read/write operations and high storage density. However, its crossbar array structure causes a severe…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully…
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…
The ramp reversal memory (RRM) is a non-volatile memory effect previously observed in correlated oxides exhibiting temperature-driven metal-insulator transitions (MITs). In essence, when a system displaying RRM is heated to a specific…
Nonvolatile resistive-switching (RS) memories promise to revolutionize hardware architectures with in-memory computing. Recently, ion-interclation materials have attracted increasing attention as potential RS materials for their…
Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…
We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology,…
As the packing density of resistive random access memory (RRAM) devices increases, the effect of thermal cross-talk across the devices in a crossbar array arrangement influences their overall operation significantly. The electro-thermal…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…