Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.
Cite
@article{arxiv.2502.02119,
title = {Effect of SOI substrate on silicon nitride resistance switching using MIS structure},
author = {A Mavropoulis and N Vasileiadis and C Theodorou and L Sygellou and P Normand and G Ch Sirakoulis and P Dimitrakis},
journal= {arXiv preprint arXiv:2502.02119},
year = {2025}
}