Optical bistable SOI micro-ring resonators for memory applications
Abstract
The present work focuses on experimental investigations of a bistabile silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. Flipping the optical input power provides a convenient mechanism for a switching of the MRR output characteristics between two steady states having a long holding time. The transition of the resonator output between these states is experimentally investigated. It is shown that the switching speed is limited by a low-to-high transition of 188 ns. Obtained results shows an application of the passive SOI MRR as an all-optical memory cell with two complementary outputs.
Cite
@article{arxiv.2109.08581,
title = {Optical bistable SOI micro-ring resonators for memory applications},
author = {Andrey A. Nikitin and Ilya A. Ryabcev and Aleksei A. Nikitin and Alexander V. Kondrashov and Alexander A. Semenov and Dmitry A. Konkin and Andrey A. Kokolov and Feodor I. Sheyerman and Leonid I. Babak and Alexey B. Ustinov},
journal= {arXiv preprint arXiv:2109.08581},
year = {2022}
}