Related papers: Complementary Resistive Switching in Tantalum Oxid…
Resistive switching (RS) devices, based on soft materials such as organic, biomolecules as well as natural plant extracts etc., has emerged as a promising alternative to the conventional memory technologies. They offer simple device…
Transition metal oxides (TMOs) are complex electronic systems which exhibit a multitude of collective phenomena. Two archetypal examples are VO2 and NdNiO3, which undergo a metal-insulator phase-transition (MIT), the origin of which is…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Passive crossbar arrays based upon memristive devices, at crosspoints, hold great promise for the future high-density and non-volatile memories. The most significant challenge facing memristive device based crossbars today is the problem of…
The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance…
Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit…
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…
Resistive random-access memory (ReRAM) is an emerging non-volatile memory technology for high-density and high-speed data storage. However, the sneak path interference (SPI) occurred in the ReRAM crossbar array seriously affects its data…
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states.…
Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…
Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au…
In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…