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We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We designed the free layer using Cobalt based Heusler…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
Correlation effects on the electronic structure of half-metallic CrAs in zinc-blende structure are studied for different substrate lattice constants. Depending on the substrate the spectral weight of the non-quasiparticle states might be…
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…
Endogenous chemical exchange saturation transfer (CEST) effects are always diluted by competing effects such as direct water proton saturation (spillover) and macromolecular magnetization transfer (MT). This leads to T2-and MT-shine-through…
Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
The reversed and shift (RAS) sparse array scheme, which is based on the difference and sum co-array (DSCA) and remarkably enhances the capability of identifying sources, is proposed. For the original nested array (NA) or co-prime array…
Silicon microring resonators (MRRs) have shown strong potential in acting as the nonlinear nodes of photonic reservoir computing (RC) schemes. By using nonlinearities within a silicon MRR, such as the ones caused by free-carrier dispersion…
A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
Spin Transfer Torque RAM (STTRAM) is a promising candidate for Last Level Cache (LLC) due to high endurance, high density and low leakage. One of the major disadvantages of STTRAM is high write latency and write current. Additionally, the…
Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
In this paper, a non-orthogonal multiple access based cooperative relaying system (NOMA-CRS) is considered to increase spectral efficiency. Besides, the simultaneous wireless information and power transfer (SWIPT) is proposed for the relay…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
Online continual learning, aimed at developing a neural network that continuously learns new data from a single pass over an online data stream, generally suffers from catastrophic forgetting. Existing replay-based methods alleviate…
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…
We present a unique application of OxRAM devices in CMOS Image Sensors (CIS) for dynamic range (DR) improvement. We propose a modified 3T-APS (Active Pixel Sensor) circuit that incorporates OxRAM in 1T-1R configuration. DR improvement is…