We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in high-resistance-state while negligible EB in low-resistance-state. Conductive filaments forming and rupture in the NiO layer but near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetic-electrical random access memory devices.
@article{arxiv.1710.01865,
title = {Electric field Control of Exchange Bias by Resistive Switching},
author = {L. J. Wei and Z. Z. Hu and Y. J. Wang and G. X. Du and Y. Yuan and J. Wang and H. Q. Tu and B. You and S. M. Zhou and Y. Hu and J. Du},
journal= {arXiv preprint arXiv:1710.01865},
year = {2017}
}