Related papers: Electric field Control of Exchange Bias by Resisti…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
Exchange bias is a unidirectional magnetic anisotropy that often arise from interfacial interaction of a ferromagnetic and antiferromagnetic layers. In this article, we show that a metallic layer with spin-orbit coupling can induces an…
Exchange bias (EB) is usually observed in systems with interface between different magnetic phases after field cooling. Here we report an unusual phenomenon in which a large EB can be observed in Ni-Mn-In bulk alloys after zero-field…
The exploration of exchange bias (EB) on the nanoscale provides a novel approach to improving the anisotropic properties of magnetic nanoparticles for prospective applications in nanospintronics and nanomedicine. However, the physical…
The exchange bias (EB) effect has been observed in magnetic Bi$_{0.9}$Gd$_{0.1}$Fe$_{0.9}$Ti$_{0.1}$O$_3$ nanoparticles. The influence of magnetic field cooling on the exchange bias effect has also been investigated. The magnitude of the…
Electrical transport properties as a function of magnetic field and time have been investigated in polycrystalline, Nd_{0.84}Sr_{0.16}CoO_3. A strong exchange bias (EB) effect is observed associated with the fairly large intragranular…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
This work analyzes the behavior of the interface between a ferromagnetic material and an alter-magnet. We use a well-established line of arguments based on electronic mean-field calculations to show that new surface phenomena that lead to…
Up to now, for the conventional exchange bias (EB) systems there has been one pinning phase and one pinned phase, and the pinning and pinned phases are inherent to the material and do not mutually transform into each other. Interestingly,…
We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
The exchange bias (EB) effect was discovered 60 years ago by Meiklejohn and Bean. Meanwhile the EB effect has become an integral part of modern magnetism with implications for basic research and for numerous device applications. The EB…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
Exchange bias (EB) refers to a shift of the hysteresis loop along the field axis in materials consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers, generally after a cooling procedure in high magnetic field. This effect is…
We have studied the influence of non-magnetic defects throughout the antiferromagnet Co_{1-y}O on the exchange bias (EB) in epitaxially grown Co_{1-y}O/Co bilayers. These defects are either substitutional or structural (twin boundaries and…
This article reports dependence of exchange bias (EB) effect on interparticle interactions in nanocrystalline Co/CoO core/shell structures, synthesized using conventional sol-gel technique. Analysis via powder X-Ray diffraction (PXRD)…
The exchange bias (EB) effect, pivotal in magnetic data storage and sensing devices, has been observed not only in interfacial regions but also in intrinsic ferromagnetic materials. Here, we've uncovered a robust and stable exchange bias…
Research on the exchange bias (EB) phenomenon has witnessed a flurry of activity during recent years, which stems from its use in magnetic sensors and as stabilizers in magnetic reading heads. EB was discovered in 1956 but it attracted only…
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two…
Exchange bias (EB) is a cornerstone of modern magnetic memory and sensing technologies. Its extension to the realm of two-dimensional (2D) van der Waals (vdW) magnets holds promise for revolutionary advancements in miniaturized and…