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A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Non-orthogonal multiple access (NOMA) and spectrum sharing (SS) are two emerging multiple access technologies for efficient spectrum utilization in future wireless communications standards. In this paper, we present the performance analysis…
Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…
Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report…
Replacing modules in pretrained models, especially swapping quadratic self-attention for efficient attention alternatives, poses a hard optimization problem: cold-start reinitialization destabilizes frozen backbones. We isolate this core…
Dynamic Random Access Memory (DRAM) is the prevalent memory technology used to build main memory systems of almost all computers. A fundamental shortcoming of DRAM is the need to refresh memory cells to keep stored data intact. DRAM refresh…
Graphene oxide (GO)-based resistive random access memory (RRAM) is one of the most promising emerging non-volatile memories for flexible electronics because of its simple structure and low fabrication cost. The reported switching mechanism…
The electronic origin of a large resistance change in nanoscale junctions incorporating spin crossover molecules is demonstrated theoretically by using a combination of density functional theory and the non-equilibrium Green's functions…
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…
Multi-core neuromorphic systems typically use on-chip routers to transmit spikes among cores. These routers require significant memory resources and consume a large part of the overall system's energy budget. A promising alternative…
Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this…
Cognitive radio (CR) is an important technique for improving spectral efficiency, letting a secondary system operate in a wireless spectrum when the primary system does not make use of it. While it has been widely explored over the past 25…
Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…
In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…
Content-Addressable Memory (CAM) is a powerful abstraction for building memory caches, routing tables and hazard detection logic. Without a native CAM structure available on FPGA devices, their functionality must be emulated using the…
We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…
We consider a rate-splitting multiple access (RSMA)-based communication and radar coexistence (CRC) system. The proposed system allows an RSMA-based communication system to share spectrum with multiple radars. Furthermore, RSMA enables…