Related papers: Spin Transfer from a Ferromagnet into a Semiconduc…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Transport properties of ferromagnetic/non-magnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic field, temperature, bias and gate voltage. By designing the magnetic electrodes to have…
We report intrinsic spin decay length of an antiferromagnetic insulator. We found that at an antiferromagnetic/ferromagnetic interface, a spin current generated by spin pumping is strongly suppressed by two-magnon scattering. By eliminating…
A theoretical formulation for spin transport through an antiferromagnetic (AF) insulator is presented in the case driven/detected by direct/inverse spin Hall effect in two heavy metal contacts. The spin signal is shown to be transferred by…
We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both…
We have studied magnetotransport in organic-inorganic hybrid multilayer junctions. In these devices, the organic semiconductor (OSC) Alq$_3$ (tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic (FM) Co and Fe…
We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO2 films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin…
$TbMn_{6}Sn_{6}$ is a ferrimagnetic material which exhibits a highly unusual phase transition near room temperature where spins remain collinear while the total magnetic moment rotates from out-of-plane to in-plane. The mechanisms…
The resistance of a ferromagnet/superconductor/ferromagnet (F/S/F) spin valve near its superconducting transition temperature, $T_c$, depends on the state of magnetization of the F layers. This phenomenon, known as spin switch effect (SSE),…
We report the electrical injection and detection of spin polarized current in lateral ferromagnet-nonmagnet-ferromagnet spin valve devices, ferromagnet being cobalt and nonmagnet being indium (In) or indium oxide (In2O3) nanostructures. The…
Antiferromagnets may exhibit spin superfluidity since the dipole interaction is weak. We seek to establish that this phenomenon occurs in insulators such as NiO, which is a good spin conductor according to previous studies. We investigate…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
We theoretically study a finite size $SF_1NF_2$ spin valve, where a normal metal ($N$) insert separates a thin standard ferromagnet ($F_1$) and a thick half-metallic ferromagnet ($F_2$). For sufficiently thin superconductor ($S$) widths…
We present results on experimental studies of spin current, measured under spin pumping at ferromag-netic resonance in wide frequency band 2-20 GHz for SrIrO3/La0.7Sr0.3MnO3 heterostructures fabricated by RF magnetron sputtering at high…
We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped…
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of…
We report a quasi-one-dimensional S = 1 spin chain compound BaNiTe2O7. This magnetic system has been investigated by magnetic susceptibility, specific heat, and neutron powder diffraction. These results indicate that BaNiTe2O7 develops a…
In (S/F) hybrids the suppression of superconductivity by the exchange field h_ex of the ferromagnet can be partially lifted when different directions of h_ex are sampled simultaneously by the Cooper pair. In F/S/F trilayer geometries where…