Related papers: Dynamically controlled charge sensing of a few-ele…
Measurement of charge configurations in few-electron quantum dots is a vital technique for spin-based quantum information processing. While fast and high-fidelity measurement is possible by using proximal quantum dot charge sensors, their…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…
The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses…
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide…
Single-shot measurement of the charge arrangement and spin state of a double quantum dot are reported, with measurement times down to ~ 100 ns. Sensing uses radio-frequency reflectometry of a proximal quantum dot in the Coulomb blockade…
We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well…
We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…