Related papers: Dynamically controlled charge sensing of a few-ele…
Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with non-cryogenic operating temperatures. Yet…
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double…
State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency…
We present a numerical model which allows us to study the Kelvin force probe microscopy response to the charge switching in quantum dots at various time scales. The model provides more insight into the behavior of frequency shift and…
Quantum dots are frequently used as charge sensitive devices in low temperature experiments to probe electric charge in mesoscopic conductors where the current running through the quantum dot is modulated by the nearby charge environment.…
We have investigated few-body states in vertically stacked quantum dots. Due to small inter-dot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange is the dominant spin interaction.…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
We analyze the dynamics of a continuously observed, damped, microwave driven solid state charge qubit. The qubit consists of a single electron in a double well potential, coupled to an oscillating electric field, and which is continuously…
We provide a physical analysis of the charging and detection of the first few electrons in a laterally-coupled GaAs/AlGaAs quantum dot (LCQD) circuit with integrated quantum point contact (QPC) read-out. Our analysis is based on the…
We demonstrate single-shot readout of quantum states of the Josephson charge qubit. The quantum bits are transformed into and stored as classical bits (charge quanta) in a dynamic memory cell - a superconducting island. The transformation…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
We propose an all optical spin initialization and readout concept for single self assembled quantum dots and demonstrate its feasibility. Our approach is based on a gateable single dot photodiode structure that can be switched between…
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the…
The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of…
Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which is typically described by modeling and simulations…
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…
We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At…