Related papers: Spin precession and inverted Hanle effect in a sem…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a…
We present a theoretical study of spin transport in a superconducting mesoscopic spin valve under the action of a magnetic field misaligned with respect to the injected spin. We demonstrate that superconductivity can either strongly enhance…
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band…
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents…
It is shown that in spin injection experiments the interplay between external magnetic field and alternating current can be observed already on a single ferromagnet/normal metal interface. The interface resistance is predicted to exhibit…
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for…
We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…
We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…
Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic…
The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
We present a theoretical study of diluted magnetic semiconductors that includes spin-orbit coupling within a realistic host band structure and treats explicitly the effects of disorder due to randomly substituted Mn ions. While spin-orbit…