Related papers: Spin precession and inverted Hanle effect in a sem…
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g. fringe fields, etc.), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3…
Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper…
We consider the possibility of detecting spin precession in a magnetic field by nonequilibrium transport processes. We find that time reversal symmetry imposes strong constraints on the problem. Suppose the tunneling occurs directly between…
In the systems ferromagnet/superconductor ([Fe, Ni]/In), the temperature dependent transport has been investigated within the temperature range including superconducting transition temperature for Indium. It has been found that when Indium…
We report the results of magnetoresistance measurements in vertical organic spin valves with the magnetic field oriented perpendicular to the layer stack. The magnetoresistance measurements were performed after carefully preparing either…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…
We theoretically study a finite size $SF_1NF_2$ spin valve, where a normal metal ($N$) insert separates a thin standard ferromagnet ($F_1$) and a thick half-metallic ferromagnet ($F_2$). For sufficiently thin superconductor ($S$) widths…
This paper shows that the presence of two dynamical regimes, characterized by different precessional-axis, is the origin of the non-monotonic behavior of the output integrated power for large-amplitude magnetization precession driven by…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…
We study spin accumulation and spin relaxation in a superconducting nanowire. Spins are injected and detected by using a set of magnetic tunnel contact electrodes, closely spaced along the nanowire. We observe a giant enhancement of the…
We propose a mechanism whereby spin supercurrents can be manipulated in superconductor/ferromagnet proximity systems via nonequilibrium spin injection. We find that if a spin supercurrent exists in equilibrium, a nonequilibrium spin…
It is well-known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductor (DMS) like Ga$_{1-x}$Mn$_x$As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that…
Propagating, directionally dependent, polarized spin-currents are created in an anisotropic planar semiconductor microcavity, via Rayleigh scattering of optically injected polaritons in the optical spin Hall regime. The influence of…
One-dimensional quantum wires are considered as prospective elements for spin transport and manipulation in spintronics. We study spin dynamics in semiconductor GaAs-like nanowires with disorder and spin-orbit interaction by using a…
Control and manipulation of electric current and, especially, its degree of spin polarization (spin filtering) across single molecules are currently of great interest in the field of molecular spintronics. We explore one possible strategy…
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for…
We report results of a Monte Carlo study of doped, diluted magnetic semiconductors in the low carrier density (insulating) regime. We find that the system undergoes a transition from a paramagnet at high temperatures to a ferromagnet at low…