Related papers: Spin precession and inverted Hanle effect in a sem…
A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric…
Ultrashort spin current pulses have a great potential of becoming the carriers of information in future ultrafast spintronics. They present the outstanding property of an extremely compressed time profile, which can allow for the building…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…
We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical…
The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We…
The investigation of the properties of metal-semiconductor interfaces has gained significant attention due to the unique features that emerge from the combination of both metal and semiconductor attributes. In this report, the magnetic…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…
We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized…
The effect of the interface roughness on the spin injection from a ferromagnet into a semiconductor is studied theoretically. Even a small interface irregularity can lead to a significant enhancement of the injection efficiency. When a…
Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical…