Related papers: Fully electrically read-write device out of a ferr…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
We demonstrate for the first time that functionally complete digital logic can be created by using three terminal devices each consisting of a magnetic tunnel junction (MTJ) and spin transfer torque (STT) element with a shared free magnetic…
Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used to…
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on…
Magnetic semiconductors are a powerful platform for understanding, utilizing and tuning the interplay between magnetic order and electronic transport. Compared to bulk crystals, two-dimensional magnetic semiconductors have greater…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
Memristors provide a tempting solution for weighted synapse connections in neuromorphic computing due to their size and non-volatile nature. However, memristors are unreliable in the commonly used voltage-pulse-based programming approaches…
In response to an external, microwave-frequency magnetic field, a paramagnetic medium will absorb energy from the field that drives the magnetization dynamics. Here we describe a new process by which an external spin injection source, when…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
A review of new developments in theoretical and experimental electronic structure investigations of half-metallic ferromagnets (HMF) is presented. Being semiconductors for one spin projection and metals for another ones, these substances…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage…
In this paper a novel compressor for static magnetic fields is proposed based on finite embedded transformation optics. When the DC magnetic field passes through the designed device, the magnetic field can be compressed inside the device.…
A device which converts analog magnetic signals directly into digital information is proposed. The device concept is based on the monostable-bistable transition logic element, which consists of two resonant tunneling diodes (load and…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…