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Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to…
Spintronics has gone through substantial progress due to its applications in energy-efficient memory, logic and unconventional computing paradigms. Multilayer ferromagnetic thin films are extensively studied for understanding the domain…
Ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$ keeps the records of colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Here we report tuning the electronic transport properties via doping and pressure in…
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the…
While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
Magnetic fluids are excellent candidates for important research fields including energy harvesting, biomedical applications, soft robotics and exploration. However, notwithstanding relevant advancements such as shape reconfigurability, that…
Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving…
Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
Since the experimental discovery of magnetic skyrmions achieved one decade ago, there have been significant efforts to bring the virtual particles into all-electrical fully functional devices, inspired by their fascinating physical and…
We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
The three essential pillars of magnetic data storage devices are readability, writeability, and stability. However, these requirements compete as magnetic domain sizes reach the fundamental limit of single atoms and molecules. The proven…
We report the fabrication and properties of a polymeric memristor, i.e. an electronic element with memory of its previous history. We show how this element can be viewed as a functional analog of a synaptic junction and how it can be used…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…
Neuromorphic computing aims to revolutionize large-scale data processing by developing efficient methods and devices inspired by neural networks. Among these, the control of magnetism through ion migration has emerged as a promising…
We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian,…
Using theoretical arguments, we show that, in order to exploit half-metallic ferromagnets in tunneling magnetoresistance (TMR) junctions, it is crucial to eliminate interface states at the Fermi level within the half-metallic gap; contrary…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…