Related papers: Fully electrically read-write device out of a ferr…
A memristor is one of four fundamental two-terminal solid elements in electronics. In addition with the resistor, the capacitor and the inductor, this passive element relates the electric charges to current in solid state elements. Here we…
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…
We present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30$\mu$m) clamped at its both ends.…
As a potential revolutionary topic in future information processing, mechanical computing has gained tremendous attention for replacing or supplementing conventional electronics vulnerable to power outages, security attacks, and harsh…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…
We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
We utilize a single atom substitution technique with spectroscopic imaging in a scanning tunneling microscope (STM) to visualize the anisotropic spatial structure of magnetic and non-magnetic transition metal acceptor states in the GaAs…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
There are two competing views of itinerant ferromagnetism, the first viewing ferromagnetism as resulting from the indirect coupling between local moments via the itinerant carrier dynamics, the so-called RKKY mechanism, while in the…
We designed and experimentally demonstrated a four-terminal superconducting device which can function as a non-latching (reversible) superconducting switch from the diode regime to the resistive state by applying a control current much…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
Rapid developments in material research of metallic ferromagnetic (III,Mn)V semiconductors over the past few years have brought a much better understanding of these complex materials. We review here some of the main developments and current…
Due to the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them…
We examine the possibility of using graphene nanoribbons (GNRs) with directly substituted chromium atoms as spintronic device. Using density functional theory, we simulate a voltage bias across a constructed GNR in a device setup, where a…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…