Related papers: Photoluminescence of patterned arrays of verticall…
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…
We report correlation and cross-correlation measurements of photons emitted under continuous wave excitation by a single II-VI quantum dot (QD) grown by molecular-beam epitaxy. A standard technique of microphotoluminescence combined with an…
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and…
We have performed near-field spectroscopy and microscopy of the InAs/AlGaAs quantum-dot-based nanoclusters. It is observed that the photoluminescence spectra of spatially confined excitons in the nanoclusters is blue-shifted up to 20 meV as…
We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra…
We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
The origin of the emission within the optical mode of a coupled quantum dot-micropillar system is investigated. Time-resolved photoluminescence is performed on a large number of deterministically coupled devices in a wide range of…
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we…
Embedding semiconductor quantum dots into bullseye resonators has significantly advanced the development of bright telecom quantum light sources for fiber-based quantum networks. To further improve the device flexibility and stability, the…
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are…
We report on a temporal evolution of photoluminescence (PL) spectroscopy of CuInS$_{2}$/ZnS colloidal quantum dots (QDs) by drop-casting on SiO$_{2}$/Si substrates and high quality factor microdisks (MDs) under different atmospheric…
Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$ diode structure embedding semiconductor quantum dots: the gated device enables…
We formulate a theory of low-temperature, stationary photoluminescence from a quantum-dot molecule composed of two spherical quantum dots whose electronic subsystems are resonantly coupled via the Coulomb interaction. We show that the…
The spectra of two-dimensional photonic crystal slab nanocavities with embedded InAs quantum dots are measured by photoluminescence and reflectance. In comparing the spectra taken by these two different methods, consistency with the…
A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential.…
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux.…
We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample…