Related papers: Photoluminescence of patterned arrays of verticall…
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of…
We investigate the intensity correlation properties of single photons emitted from an optically excited single semiconductor quantum dot. The second order temporal coherence function of the photons emitted at various wavelengths is measured…
We demonstrate the coupling of PbS quantum dot emission to photonic crystal cavities at room temperature. The cavities are defined in 33% Al, AlGaAs membranes on top of oxidized AlAs. Quantum dots were dissolved in Poly-methyl-methacrylate…
We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of…
This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of…
We investigate the properties of a coherent array containing about 200 Bose-Einstein condensates produced in a far detuned 1D optical lattice. The density profile of the gas, imaged after releasing the trap, provides information about the…
The study investigates and compares the impact of intense, non-diffractive, non-resonant structured laser beams with various intensity profiles on the properties of InAs/GaAs cylindrical quantum dot. The comparative study demon-strates that…
We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photoluminescence quenching were identified. We measured reflectivity…
We report on the first observation of optical gain from InAs nanocrystal quantum dots emitting at 1.55 microns based on a three-beam, time resolved pump-probe technique. The nanocrystals were embedded into a transparent polymer matrix…
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed…
We study theoretically the spontaneous emission from an inhomogeneous ensemble of quantum dots in the weak excitation limit. We show that collective, superradiance-like effects lead to an enhanced emission rate in the presence of…
The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum…
PbS quantum dots are promising active emitters for use with high-quality Si nanophotonic devices in the telecommunications-band. Measurements of low quantum dot densities are limited both because of low fluorescence levels and the…
We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner…
We demonstrate scattering of laser light from two InAs quantum dots coupled to a photonic crystal waveguide, which is achieved by strain-tuning the optical transitions of the dots into mutual resonance. By performing measurements of the…
We present measurements of the second-order coherence function on emission from single GaN quantum dots. In some cases a large degree of photon antibunching is observed, demonstrating isolation of a single quantum system. For a selected…
We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias…
The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to…