Related papers: Photoluminescence of patterned arrays of verticall…
It is usually assumed that when performing a photoluminescence experiment on a microcavity containing an inhomogeneously broadened quantum dots ensemble, the cavity mode appears as a positive peak with a linewidth that reflects the mode…
A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the quantum dots is induced by a transformation of an epitaxial…
The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research are not yet completely understood. In this letter we report…
We report a valley photonic crystal (VPhC) waveguide in a GaAs slab with InAs quantum dots (QDs) as an internal light source exploited for experimental characterization of the waveguide. A topological interface state formed at the interface…
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional…
We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…
Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to…
In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet…
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically…
Spin-polarized electron photoemission has been studied for GaAs/GaAs$_{1-x}$P$_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the…
Emission spectra of quantum dot arrays in zero-dimensional microcavities are studied theoretically, and it is shown that they are determined by the competition between the formation of the collective superradiant mode and inhomogeneous…
Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present…
The emission dynamics of a GaAs microcavity at different angles of observation with respect to the sample normal under conditions of nonresonant picosecond-pulse excitation is measured. At sufficiently high excitation densities, the decay…
A study of highly symmetric site-controlled Pyramidal In0.25Ga0.75As quantum dots (QDs) is presented. It is discussed that polarization-entangled photons can be also obtained from Pyramidal QDs of different designs from the one already…
The spontaneous emission rate of a quantum dot coupled to a structured photonic reservoir is determined by the frequency dependence of its local density of photon states. Through phonon-dressing, a breakdown of Fermi's golden rule can occur…
A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling…
Semiconductor quantum dots embedded in photonic-crystal nanostructures have been the subject of intense study. In this context, quantum dots are often considered to be simple two-level emitters, i.e., the complexities arising from the…
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the…
The annular photonic crystals have been regarded as a satisfactory candidate to realize dual-polarization photonic device. In this letter, we focus our attention on the study of annular photonic crystal cavity to verify its application in…
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…