Spin-polarized electron photoemission has been studied for GaAs/GaAs1−xPx strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the photoemission characteristics. The heavy-hole and light-hole transitions are reproducibly observed in quantum efficiency spectra, enabling direct measurement of the band energies and the energy splitting. Electron-spin polarization as high as 86% with over 1% quantum efficiency has been observed.
@article{arxiv.physics/0412099,
title = {A systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes},
author = {T. Maruyama and D. -A. Luh and A. Brachmann and J. E. Clendenin and E. L. Garwin and S. Harvey and J. Jiang and R. E. Kirby and C. Y. Prescott and R. Prepost and A. M. Moy},
journal= {arXiv preprint arXiv:physics/0412099},
year = {2009}
}