Related papers: Photoluminescence of patterned arrays of verticall…
Ordered InAs quantum dot (QD) arrays have been obtained on pre-patterned GaAs (0 0 1) substrates by atomic force microscopy (AFM) local oxidation nanolithography. Prior to InAs molecular beam epitaxy (MBE) deposition, an ordered square…
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…
We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer…
On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive…
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting…
Highly coherent quantum emitters operating in the telecommunication C-band (1530 - 1565nm), where ultra-low-loss fibers and photonic circuits are available, are crucial to the development of scalable quantum technologies. In this work, we…
We report a study of the quantum dot emission in short photonic crystal waveguides. We observe that the quantum dot photoluminescence intensity and decay rate are strongly enhanced when the emission energy is in resonance with Fabry-Perot…
Quantum dots play a promising role in the development of novel optical and biosensing devices. In this study, we investigated steady-state and time-dependent luminescence properties of InGaP/ZnS core/shell colloidal quantum dots in a…
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for…
The development of scalable sources of non-classical light is fundamental to unlock the technological potential of quantum photonics\cite{Kimble:Nat2008}. Among the systems under investigation, semiconductor quantum dots are currently…
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…
We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of…
We study the spontaneous emission from a regular lateral array or a randomly distributed ensemble of quantum dots under strong excitation (full inversion) conditions. We focus on the similarities and differences between the cases of random…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown…
We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free…
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the…
The integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much of attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several…
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…
We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers…