The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown to follow in general a non-exponential decay. Only for specific conditions in regard to optical excitation and carrier population, for example, the decay can be well described by a mono-exponential form. For resonant excitation of the ground state transition a strong shortening of the luminescence decay time is observed as compared to the non-resonant case. The results are consistent with a microscopic theory that accounts for deviations from a simple two-level picture.
@article{arxiv.0706.3673,
title = {Systematic study of carrier correlations in the electron-hole recombination dynamics of quantum dots},
author = {T. Berstermann and T. Auer and H. Kurtze and M. Schwab and D. R. Yakovlev and M. Bayer and J. Wiersig and C. Gies and F. Jahnke and D. Reuter and A. D. Wieck},
journal= {arXiv preprint arXiv:0706.3673},
year = {2009}
}