Related papers: Local spin valve effect in lateral (Ga,Mn)As/GaAs …
We demonsrtate electrical spin injection and detection in $n$-type Ge ($n$-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral spin-valve (LSV) devices with Heusler-alloy Schottky tunnel…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $\mu$V) spin valve signals at room temperature and injector currents of…
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
We report the results of magnetoresistance measurements in vertical organic spin valves with the magnetic field oriented perpendicular to the layer stack. The magnetoresistance measurements were performed after carefully preparing either…
We study charge transport in a two dimensional hybrid systems consisting of nonmagnetic two dimensional electron gas with spin-orbit interaction sandwiched between a Ferromagnetic lead and a normal metallic lead (FM/2DEG/NM). An {\it…
Electrical generation of polarized spins in nonmagnetic materials is of great interest for the underlying physics and device potential. One such mechanism is chirality-induced spin selectivity (CISS), with which structural chirality leads…
Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…
The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we…
We theoretically study the nonlocal spin transport in a device consisting of a nonmagnetic metal (N) and ferromagnetic injector (F1) and detector (F2) electrodes connected to N. We solve the spin-dependent transport equations in a device…
A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by…
We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is…
The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays…
An electron interferometer was designed and fabricated via a normal metal/insulator/ferromagnet non-local lateral spin valve with a ring-shaped normal metal/insulator spacer, and spin current interference was observed. A very high spin…
Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge…
The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…