Related papers: Local spin valve effect in lateral (Ga,Mn)As/GaAs …
We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Lateral spin valves are used to generate and characterize pure spin currents. Non-local voltage measured in such structures provides information about spin polarization and spin decay rates. For wide high-transparency F/N contacts it was…
We report detailed investigations of hybrid organic-inorganic vertical spin valves. Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3) organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as the bottom…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…
We study the nonlocal spin transport in a lateral spin valve with multiple ferromagnetic (FM) electrodes. When two current-injecting and two spin current-detecting electrodes are all ferromagnetic, the number of possible nonlocal spin…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…
We study the effect of the ferromagnetic (FM) contacts on the spin accumulation in the lateral spin valve system for the collinear magnetization configurations. When an additional FM electrode is introduced in the all-metallic lateral…
We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes was found to have a significant influence on…
We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic…
We analyze the effects of spin-orbit coupling on fluctuations of the conductance of a quantum dot fabricated in a GaAs heterostructure. We argue that spin-orbit effects may become important in the presence of a large parallel magnetic field…
We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy…
We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…
We investigate, assess, and suggest possibilities for a measurement of the local spin susceptibility of a conducting low-dimensional electron system. The basic setup of the experiment we envisage is a source-probe one. Locally induced spin…
The magnetic properties of the diluted magnetic semiconductor Ga_{1-x}Mn_{x}As are studied within the dynamical cluster approximation. We use the k-dot-p Hamiltonian to describe the electronic structure of GaAs with spin-orbit coupling and…
We study the influence of spin waves on transport through a single-level quantum dot weakly coupled to ferromagnetic electrodes with noncollinear magnetizations. Side peaks appear in the differential conductance due to emission and…
We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…