Related papers: Local spin valve effect in lateral (Ga,Mn)As/GaAs …
This article discusses the spin-torque effect in a spin-valve made out of two ferromagnetic leads connected through a coherent nanoconductor (NC), in the limit where a single channel of the NC lies near the Fermi energy of the leads. Due to…
We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped…
A nonlocal electric response in the spin-Hall regime, resulting from spin diffusion mediating charge conduction, is predicted. The spin-mediated transport stands out due to its long-range character, and can give dominant contribution to…
Andreev molecules consist of two coherently coupled Josephson junctions and permit non-local control over supercurrents. By making the barriers magnetic and thus creating a spin-valve, we predict that a non-local Josephson diode effect…
Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
We report the successful fabrication of lateral organic spin valves with a channel length in the sub $100\,nm$ regime. The fabication process is based on in-situ shadow evaporation under UHV conditions and therefore yields clean and…
In a recent Letter Hammar et al. claim the observation of injection of a spin-polarized current in a two-dimensional electron gas (2DEG). This is an important observation, since, despite considerable effort of several groups, all attempts…
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…
We investigate the spin accumulation effect in eccentric semiconductor multichannel rings with Rashba spin-orbit interaction and threaded by a magnetic flux. Due to the finite eccentricity, the spin polarization induced at the borders of…
Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance…
We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe…
The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations are observed.…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
The magnetization reversal and dynamics of a spin valve pillar, whose lateral size is 64$\times$64 nm$^2$, are studied by using micromagnetic simulation in the presence of spin transfer torque. Spin torques display both characteristics of…
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping…
The current induced local spin polarization due to weak Rashba spin-orbit coupling in narrow strip is studied. In the presence of longitudinal charge current, local spin polarizations appear in the sample. The spin polarization…
A recently proposed exchange-correlation functional (Dewhurst et al. 10.1021/acs.jctc.7b01049) with in density functional theory, which ensures that the exchange-correlation magnetic field is source-free, is shown to give non-zero internal…
We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a {Landauer-B\"uttiker} setup…
We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…