We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe quantum wells. By controlling the strength of the spin-orbit splittings and the n-type to p-type transition by a top-gate, we observe a large non-local resistance signal due to the ISHE in the p-regime, of the order of kOhms, which is several orders of magnitude larger than in metals. In the n-regime, as predicted by theory, the signal is at least an order of magnitude smaller. We verify our experimental observation by quantum transport calculations which show quantitative agreement with the experiments.
@article{arxiv.0812.3768,
title = {Ballistic Intrinsic Spin-Hall Effect in HgTe Nanostructures},
author = {C. Bruene and A. Roth and E. G. Novik and M. Koenig and H. Buhmann and E. M. Hankiewicz and W. Hanke and J. Sinova and L. W. Molenkamp},
journal= {arXiv preprint arXiv:0812.3768},
year = {2008}
}