We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a {Landauer-B\"uttiker} setup for quantum transport. We show that the spin Hall angle of graphene devices exhibits mesoscopic fluctuations that are similar to metal devices. Furthermore, the product between the {maximum spin Hall angle deviation} and dimensionless longitudinal conductivity follows a universal relationship ΘsH×σ=0.18. Finally, we compare the universal relation with recent experimental data and numerically exact real-space simulations from the tight-binding model.
@article{arxiv.2210.09393,
title = {Spin Hall angle in single-layer graphene},
author = {Juliana M. da Silva and Fernando A. F. Santana and Jorge G. G. S. Ramos and Anderson L. R. Barbosa},
journal= {arXiv preprint arXiv:2210.09393},
year = {2022}
}
Comments
Accepted for publication in the Journal of Applied Physics